<^.ml-c.onaactoi ^pioaucti, una. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 mje205 (silicon) MJE205K medium-power npn silicon transistors ... for use as an output device in complementary audio amplifiers up to 20-watts music power per channel. ? high dc current gain -hpe " 25-100@lc ? thermopad high-efficiency compact package ?complementary to pnp mje 105, mje105k ?choice of packages - mje205-case 90 MJE205K-case 199 5 ampere power transistors npn silicon so volts 66 watts maximum ratings rating collector-emitter voltage collktor-bam voltage em. hot-bin voltage collector currant flaw currant total dnict diuipation stc-25c otrtlt above 25c operating and storage junction temperature range symbol vceo vcb veb ic 'b "ot tj.t,tb thermal characteristics ctiaracterittlc thermal reiiitance, junction to case symbol ?jc value so so 4.0 5.0 2.5 65 0.522 -55 to +150 max 1.92 unit vdc vdc vdc adc adc vvmtl w/c c unit c/w tsaf* ar?? curwt ira indicated by fiflure 1 . both hmltl ar? applicabl* and muff b? obhrwd. electrical characteristics (tc = 25c unlan otherwi? noted) characteristic symbol | min off characteristics collector-emitter breakdown voltaget (1c - loomadc, ib -01 collector cutoff current (vcb-50vdi;. ie -0) (vcb ? so vdc, ie - 0, tc- 15oc) emitter cutoff current (vb - 4.0 vdc, ic - 01 bvceot 'c80 iebo on characteristics dc current gain |lc - 2.0 adc, vce - 2.0 vdcl bin-emitter voltage he ? 2.0 adc, vce - 2.0 vdc) hfe vbe so - _ mix unit 0.1 2.0 1.0 vdc madc niadc 25 - 100 1.2 - vdc tpuluttil: pulhwmth<300m>. duty cycle<2.0x. mje 205 case 90-05 mje2o6k case 199-04 nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. n.i semi-conductors encourages customers to verity that datasheets are current before placing orders. quality semi-conductors
mje205 -h n ? b-~, ^ m v ff q t jt hcl? - "it mil dim ml 16. -it limcters 1 13 12.s7 | 3. 18 1.09 3.51 4.2 1 2.e7 0,813 15.11 ^ q 4.70 r 191 max 16.38 12.10 3.43 124 3.76 bsc 2.92 0.864 16.38 4.35 2.16 m u k st> inc min o.e35 0.496 0.125 jls?l 0.138 0.16 0.105 0.032 0.595 0.185 dm it 2: pin 1. emitter 2. collector 3 base 4es max 0.845 0.505 0.135 0.049 0.14! bsc 0.115 0.034 0.645 0.13s u.u8s u 6.22 6.48 0.245 0.255 dte: 1 leads with in .005" rad of true position (tp)atmmc case 904>s 1 q r l- ? t-u ff s t ml rib |l- ^i^ r" mr? mi t a i: - ju styl pi [ gmm \?, c dim a b " q h k 1 m * 0 s t millimeters min 1608 1257 0.51 3.61 ' 2.5- 2b7 043 1473 216 3 147 4.78 0.81 6.99 max 16.33 12.83 0.78 3.86 bsc 2.92 069 14.99 2.41 yp 171 5.03 inlhes min 0.633 0.495 0.020 0.142 0.10 nn 0.0 5 7 0.580 0.085 3" 0.058 0.188 0.032 0.275 max 0.643 u.bllb o.om bsc ll,11)i 11.112' o.s9c o.us5 'yp nnn o.i3u u.i1m 11.285 MJE205K m ? s -j el: 1. base 2. collector 3. emitter u 6,22 6.48 0.245 0.255 1 . dim "g" is to center line of leads. case 199-04
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